Determination of the bulk density of states in a-Si:H by steady-state SCLC

Solid-State Electronics

Volumn 41, Issue 1, 1997, Pages 81-86

  Čech, Vladimír ^a  

^a BRNO UNIVERSITY OF TECHNOLOGY   (Czech Republic)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; CURRENT VOLTAGE CHARACTERISTICS; DEEP LEVEL TRANSIENT SPECTROSCOPY; ELECTRIC SPACE CHARGE; ELECTRIC VARIABLES MEASUREMENT; ELECTRONIC DENSITY OF STATES; LIMITED SPACE CHARGE ACCUMULATION; PHOTOCHEMICAL REACTIONS; SEMICONDUCTOR DEVICE STRUCTURES; SENSITIVITY ANALYSIS;

HEAT DRIVEN DEFECT RECOVERY; HYDROGENATED AMORPHOUS SILICON; PHOTODEGRADATION; SPACE CHARGE LIMITED CURRENTS;

AMORPHOUS SILICON;

EID: 0030818948     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0038-1101(96)00131-1     Document Type: Article

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