Interband critical-point line shapes in confined semiconductor structures with arbitrary dimensionality: Inhomogeneous broadening

Journal of the Optical Society of America B: Optical Physics

Volumn 14, Issue 1, 1997, Pages 17-20

  He, Xing Fei ^a,b  

^a UNIVERSITY OF BRITISH COLUMBIA   (Canada)

^b UNIVERSITY AT BUFFALO   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

DIELECTRIC PROPERTIES; DIFFERENTIATION (CALCULUS); ELECTRON TRANSITIONS; ENERGY GAP; MATHEMATICAL MODELS; PHONONS; SEMICONDUCTOR MATERIALS; SPECTROSCOPIC ANALYSIS; STRAIN;

CRYSTAL STRAIN; DIELECTRIC SPECTROSCOPY; INTERBAND OPTICAL TRANSITIONS; LINEWIDTHS; LORENTZIAN MODEL; SPECTRAL LINE SHAPES;

CRYSTAL STRUCTURE;

EID: 0030817455     PISSN: 07403224     EISSN: None     Source Type: Journal    
DOI: 10.1364/JOSAB.14.000017     Document Type: Article

References (28)

1. See, for example, Spectroscopic Characterization Techniques for Semiconductor Technology III, Proc. SPIE 946, 84 (1988).
2. M. Cardona, Modulation Spectroscopy (Academic, New York, 1969).
3. D. E. Aspnes, Surf. Sci., 135, 284 (1983).
4. For a review, see D. E. Aspnes, in Optical Properties of Solids: New Developments, B. O. Seraphin, ed. (North-Holland, Amsterdam, 1976), p. 799.
5. S. M. Kelso, D. E. Aspnes, M. A. Pollack, and R. E. Nahory, Phys. Rev. B 26, 6669 (1982).
6. H. Arwin and D. E. Aspnes, J. Vac. Sci. Technol. A 2, 1316 (1984).
7. P. Lautenschlager, M. Garriga, S. Logothetidis, and M. Cardona, Phys. Rev. B 35, 9174 (1987).
8. M. Erman, J. P. Andre, and J. LeBris, J. Appl. Phys. 59, 2019 (1986).
9. M. Erman, C. Alibert, J. B. Theeten, P. Frijlink, and B. Catte, J. Appl. Phys. 63, 465 (1988).
10. U. Schmid, J. Humlicek, F. Lukes, M. Cardona, H. Presting, H. Kibbel, E. Kasper, K. Eberl, W. Wegscheider, and G. Abstreiter, Phys. Rev. B 45, 6793 (1992).
11. X.-F. He, Solid State Commun. 75, 111 (1990).
12. X.-F. He, Phys. Rev. B 42, 11751 (1990).
13. X.-F. He, R.-R. Jiang, and D. Mo, Phys. Rev. B 41, 5799 (1990).
14. D. Mo, Y.-Y. Lin, J.-H. Tan, Z.-X. Yu, G.-Z. Zhou, K.-C. Gong, G.-P. Zhang, and X.-F. He, Thin Solid Films 234, 468 (1993).
15. X.-F. He, in Proceedings of the 22nd International Conference on Physics of Semiconductors, D. J. Lockwood, ed. (World Scientific, Singapore, 1995), p. 281.
16. X.-F. He, Phys. Rev. B 43, 2063 (1991).
17. H. Mathieu, P. Lefebvre, and P. Christol, Phys. Rev. B 46, 4092 (1992).
18. P. Lefebvre, P. Christol, and H. Mathieu, Phys. Rev. B 46, 13603 (1992).
19. P. Lefebvre, P. Christol, and H. Mathieu, Phys. Rev. B 48, 17308 (1993).
20. P. Christol, P. Lefebvre, and H. Mathieu, J. Appl. Phys. 74, 5626 (1993).
21. B. O. Seraphin and N. Bottka, Phys. Rev. 145, 628 (1966).
22. H. Shen, X. C. Shen, F. H. Pollack, and R. N. Sacks, Phys. Rev. B 36, 3487 (1987).
23. J. W. Carland, H. Adad, M. Viccaro, and P. M. Raccah, Appl. Phys. Lett. 52, 1176 (1988).
24. P. Lautenschlager, P. B. Allen, and M. Cardona, Phys. Rev. B 33, 5501 (1986).
25. S. Zollner, S. Gopalan, M. Garriga, J. Humlicek, L. Vina, and M. Cardona, Appl. Phys. Lett. 57, 2838 (1990).
26. K. B. Oldham and J. Spanier, The Fractional Calculus (Academic, New York, 1974).
27. M. Abramowitz and I. A. Stegun, eds., Handbook of Mathematical Functions (Dover, New York, 1965), p. 297.
28. See, for example, Laser Spectroscopy of Solids, W. M. Yen and P. M. Selzer, eds. (Springer-Verlag, Berlin, 1981).