Quantum confined Stark effect in GaInAsSb/AlGaAsSb quantum wells grown by molecular beam epitaxy

Electronics Letters

Volumn 33, Issue 3, 1997, Pages 248-250

  Shi, Y ^a   Zhao, J H ^a   Sarathy, J ^a   Olsen, G ^a   Lee, H ^a  

^a NONE

Author keywords

Molecular beam epitaxial growth; Optoelectronic devices; Semiconductor devices; Semiconductor materials

Indexed keywords

CALCULATIONS; ELECTRIC CURRENT MEASUREMENT; EPITAXIAL GROWTH; LEAKAGE CURRENTS; MOLECULAR BEAM EPITAXY; OPTOELECTRONIC DEVICES; PHOTODIODES; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR DEVICE STRUCTURES; SUBSTRATES;

HYDROGEN FLUORIDE; QUANTUM CONFINED STARK EFFECT; TARTARIC ACID; TENSILE STRAIN; WET CHEMICAL MESA ETCHING; X RAY DIFFRACTION MEASUREMENT;

SEMICONDUCTOR QUANTUM WELLS;

EID: 0030813295     PISSN: 00135194     EISSN: None     Source Type: Journal    
DOI: 10.1049/el:19970141     Document Type: Article

References (7)

1. MILLER, D.A.B., CHEMLA, D.S., DAMEN, T.C., GOSSARD, A.C., WIEGMANN, W., WOOD, T.H., and BURRUS, C.A.: 'Band-edge electroabsorption in quantum well structures: The quantumconfined Stark effect'. Phys. Rev. Lett., 1984, 53, (22), pp. 2173-2176
2. MILLER, D.A.B., CHEMLA, D.S., DAMEN, T.C., GOSSARD, A.C., WIEGMANN, W., WOOD, T.H., and BURRUS, C.A.: 'Electric field dependence of optical absorption near the band gap of quantumwell structures', Phys. Rev. B, 1985, 32, (2), pp. 1043-1060
3. BAR-JOSEPH, I., KINGSHIRN, C., MILLER, D.A.B., CHEMLA, D.S., KOREN, U., and MILLER, B.I.: 'Quantum-confined Stark effect in InGaAs/InP quantum wells grown by organometallic vapor phase epitaxy', Appl. Phys. Lett., 1987, 50, (15), pp. 1010-1012
4. MIYAZAWA, T., TARUCHA, S., OHMORI, Y., SUZUKI, Y., and OKAMOTO, H.: Observation of room temperature excitons in GaSb-A1GaSb multi-quantum wells', Jpn. J. Appl. Phys., 1986, 25, (3), pp. L200-L202
5. WAKITA, K., KAWAMURA, Y., YOSHIKUNI, Y., ASAHI, H., and UEHARA, S.: 'Anisotropic electroabsorption and optical modulation in InGaAs/InAlAs multiple quantum well structures'. IEEE J. Quantum Electron., 1986, QE-22, (9), pp. 1831-1836
6. IWAMURA, H., SAKU, T., and OKAMOTO, H.: Optical absorption of GaAs-AlGaAs superlattice under electric field', Jpn. J. Appl. Phys., 1985, 24. (1), pp. 104-105
7. BASTARD, G., MENDEZ, E.E., CHANG, L.L., and ESAKI, L.: 'Variational calculations on a quantum well in an electric field', Phys. Rev. B, 1983, 28, (6), pp. 3241-3245