Intersubband scattering rates in GaAs quantum wells under selective and resonant excitation, measured by femtosecond luminescence

Superlattices and Microstructures

Volumn 21, Issue 1, 1997, Pages 77-83

  Hartig, M ^a   Haacke, S ^a   Taylor, R A ^b   Rota, L ^b   Deveaud, B ^a  

^a EPFL   (Switzerland)

^b UNIVERSITY OF OXFORD   (United Kingdom)

Author keywords

Carrier carrier scattering; Femtosecond time resolved spectroscopy; Phonon emission

Indexed keywords

CHARGE CARRIERS; COMPUTER SIMULATION; ELECTRON SCATTERING; ELECTRONS; LUMINESCENCE; MONTE CARLO METHODS; PHONONS; SEMICONDUCTING GALLIUM ARSENIDE;

CARRIER CARRIER SCATTERING; CONFINED ELECTRON SUBBAND; ENERGY SEPARATION; FEMTOSECOND TIME RESOLVED SPECTROSCOPY; INTERSUBBAND RELAXATION RATE; INTERSUBBAND SCATTERING RATES; LUMINESCENCE UPCONVERSION; PHONON EMISSION; PHONON SCATTERING RATE; THERMALIZATION;

SEMICONDUCTOR QUANTUM WELLS;

EID: 0030786872     PISSN: 07496036     EISSN: None     Source Type: Journal    
DOI: 10.1006/spmi.1996.0172     Document Type: Article

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