The influence of precleaning process on the gate oxide film fabricated by electron cyclotron resonance plasma oxidation

Journal of the Electrochemical Society

Volumn 144, Issue 1, 1997, Pages 311-314

  Chang, Kow Ming ^a   Li, Chii Horng ^a   Fahn, Fu Jier ^a   Tsai, Jung Yu ^a   Yeh, Ta Hsun ^a   Wang, Shih Wei ^a   Yang, Ji Yi ^a  

^a NATIONAL CHIAO TUNG UNIVERSITY   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

CLEANING; ELECTRIC PROPERTIES; ELECTRON CYCLOTRON RESONANCE; GATES (TRANSISTOR); OXIDATION; PLASMA APPLICATIONS; RELIABILITY; SILICA;

GATE OXIDE FILM; PLASMA DAMAGE; PLASMA OXIDATION; PRECLEANING;

FILM GROWTH;

EID: 0030784418     PISSN: 00134651     EISSN: None     Source Type: Journal    
DOI: 10.1149/1.1837401     Document Type: Article

References (18)

1. T. Fuydi, T. Oka, and H. Matsunami, Jpn. J. Appl. Phys., 33, 440 (1994).
2. C. F. Yeh, S. S. Lin, C. L. Chen, and Y. C. Yang, IEEE Electron Device Lett., EDL-14, 403 (1993).
3. P. C. Chen, Klaus, Y. J. Hsu, H. L. Hwang, and J. Y. Lin, J. Appl. Phys., 76, 5508 (1994).
4. P. W. Li, E. S. Yang, Y. F. Yang, J. O. Chu, and B. S. Meyerson, IEEE Electron Device Lett., EDL-15, 402 (1994).
5. J. Y. Lee, C. H. Han, and C. K. Kim, ibid., EDL-15, 301 (1994).
6. D. W. Hess, Mater. Res. Soc. Symp. Proc., 236, 191 (1992).
7. D. A. Carl, D. W. Hess, M. A. Lieberman, T. D. Nguyen, and R. Gronsky, J. Appl. Phys., 70, 3301 (1991).
8. H. Hwang, W. Ting, D. L. Kwong, and J. Lee, IEDM, 421 (1990).
9. C. G. Sodini and K. S. Krish, ibid., 617 (1992).
10. T. Yasuda, Y Ma, S. HaBermehl, and G. Lucovsky, Appl. Phys. Lett., 60, (1992).
11. D. R. Lee, C. G. Parker, J. Hauser, and G. Lucovsky, J. Vac. Sci. Technol, B13, 1788 (1995).
12. K. Yamabe and K. Taniguchi, IEEE Trans. Electron Device, 32, 423 (1985).
13. W. Yang, R. Jayaraman, and C. G. Sodini, ibid., ED-35, 935 (1988).
14. T. Hori, H. Iwasake, and K. Tsuji, ibid., ED-35, 904 (1988).
15. H. S. Momose, T. Morimoto, Y. Ozawa, M. Tsuchiaki, M. Ono, K. Yamabe, and H. Iwai, IEDM Tech. Dig., 359 (1991).
16. T. Hori, H. Iwasaki, Y. Naito, and H. Esaki, IEEE Tran. Electron Device, ED-34, 2238 (1987).
17. K. M. Chang, C. H. Li, F. J. Fahn, J. Y. Tsai, T. S. Yeh, and W. S. Wang, To be published.
18. H. Fukuda, T. Arakawa, and S. Ohno, Jpn. J. Appl. Phys., 29, L2333 (1990).