Electron-hole separation in a two-dimensional electron system induced by electric fields

Solid State Communications

Volumn 101, Issue 2, 1997, Pages 103-107

  Plentz, F ^a,c   Heiman, D ^a   Pinczuk, A ^b   Pfeiffer, L N ^b   West, K W ^b  

^a MASSACHUSETTS INSTITUTE OF TECHNOLOGY   (United States)

^b NOKIA RESEARCH CENTER   (United States)

^c FEDERAL UNIVERSITY OF MINAS GERAIS   (Brazil)

Author keywords

A. semiconductors; D. electronic states; D. optical properties; D. recombination and trapping

Indexed keywords

ELECTRIC FIELD EFFECTS; ELECTRON ABSORPTION; ELECTRONIC DENSITY OF STATES; OPTICAL PROPERTIES; PHOTOLUMINESCENCE; QUANTUM THEORY; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTOR DEVICE STRUCTURES; SEMICONDUCTOR QUANTUM WELLS; SEPARATION;

ELECTRON HOLE SEPARATION; GATE VOLTAGE; RADIATIVE RECOMBINATION TIME; TWO DIMENSIONAL ELECTRON SYSTEM; WAVEFUNCTION OVERLAP;

ELECTRON ENERGY LEVELS;

EID: 0030784220     PISSN: 00381098     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0038-1098(96)00559-5     Document Type: Article

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