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Volumn 32, Issue 1, 1997, Pages 100-104

Program load adaptive voltage generator for flash memories

Author keywords

CMOS integrated circuits; CMOS memory integrated circuits; Flash memories; Programmable circuits; Read only memories; Voltage control; Voltage generators

Indexed keywords

ADAPTIVE CONTROL SYSTEMS; BINARY CODES; CMOS INTEGRATED CIRCUITS; ELECTRIC CURRENTS; FEEDBACK CONTROL; PROM; SEMICONDUCTOR DEVICE MODELS; TRANSISTORS; VOLTAGE CONTROL; VOLTAGE MEASUREMENT;

EID: 0030784211     PISSN: 00189200     EISSN: None     Source Type: Journal    
DOI: 10.1109/4.553187     Document Type: Article
Times cited : (4)

References (11)
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  • 2
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    • Tam, S.1
  • 3
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    • Simple and efficient modeling of EPROM writing
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    • C. Fiegna et al., "Simple and efficient modeling of EPROM writing," IEEE Trans. Electron Devices, vol. 38, pp. 603-610, Mar. 1991.
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    • Fiegna, C.1
  • 5
    • 0025603638 scopus 로고
    • Charge loss associated with program disturb stresses in EPROMs
    • T. Miller et al., "Charge loss associated with program disturb stresses in EPROMs," in Proc. 28th IEEE Int. Reliablity Physics Symp., 1990, pp. 154-158.
    • (1990) Proc. 28th IEEE Int. Reliablity Physics Symp. , pp. 154-158
    • Miller, T.1
  • 7
    • 0028756726 scopus 로고
    • Failure mechanisms of flash cell in program/erase cycling
    • Dec.
    • P. Cappelletti et al., "Failure mechanisms of flash cell in program/erase cycling," in 1994 Int. Electron Devices Meeting Tech. Dig., Dec. 1994, pp. 291-294.
    • (1994) 1994 Int. Electron Devices Meeting Tech. Dig. , pp. 291-294
    • Cappelletti, P.1
  • 8
    • 0024090079 scopus 로고
    • An in-system reprogrammable 32 K × 8 CMOS flash memory
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    • V. N. Kynett et al., "An in-system reprogrammable 32 K × 8 CMOS flash memory," IEEE J. Solid-State Circuits, vol. 23, pp. 1157-1163, Oct. 1988.
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    • Kynett, V.N.1
  • 9
    • 0020844527 scopus 로고
    • An improved method for programming a word-erasable EEPROM
    • Nov.-Dec.
    • G. Torelli and P. Lupi, "An improved method for programming a word-erasable EEPROM," Alta Frequenza, vol. LII, no. 6, pp. 487-494, Nov.-Dec. 1983.
    • (1983) Alta Frequenza , vol.52 , Issue.6 , pp. 487-494
    • Torelli, G.1    Lupi, P.2
  • 10
    • 0024752312 scopus 로고
    • A 90-ns one-million erase/program cycle 1-Mbit flash memory
    • Oct.
    • V. N. Kynett et al., "A 90-ns one-million erase/program cycle 1-Mbit flash memory," IEEE J. Solid-State Circuits, vol. 24. pp. 1259-1264, Oct. 1989.
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  • 11


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.