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Volumn 133, Issue 1-6, 1997, Pages 196-200

Lasing in neonlike sulphur and silicon

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRON TRANSITIONS; SILICON; SULFUR; X RAY LASERS;

EID: 0030782890     PISSN: 00304018     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0030-4018(96)00438-5     Document Type: Article
Times cited : (25)

References (16)
  • 7
    • 0030213675 scopus 로고    scopus 로고
    • Prepulse dependence of J = 0-1 lasing at 32.6 nm in neon-like titanium
    • to be published
    • A. Präg, A. Glinz, J.E. Balmer, Y. Li and E.E. Fill, Prepulse dependence of J = 0-1 lasing at 32.6 nm in neon-like titanium, Appl. Phys. B, to be published.
    • Appl. Phys. B
    • Präg, A.1    Glinz, A.2    Balmer, J.E.3    Li, Y.4    Fill, E.E.5


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.