Resistance noise measurement: A better diagnostic tool to detect stress and current induced degradation

Microelectronics Reliability

Volumn 37, Issue 1, 1997, Pages 87-93

  Vandamme, L K J ^a   Van Kemenade, A J ^a  

^a EINDHOVEN UNIVERSITY OF TECHNOLOGY   (Netherlands)

Author keywords

[No Author keywords available]

Indexed keywords

CHARGE CARRIERS; CURRENT DENSITY; ELECTRIC RESISTANCE; ELECTRIC RESISTANCE MEASUREMENT; FAILURE ANALYSIS; INTEGRATED CIRCUIT TESTING; LSI CIRCUITS; MATHEMATICAL MODELS; RESISTORS; SEMICONDUCTOR DEVICE TESTING; STRESSES; THIN FILMS;

ALUMINUM INTERCONNECTS; CURRENT INDUCED DEGRADATION; RESISTANCE NOISE MEASUREMENT;

CONDUCTIVE FILMS;

EID: 0030737480     PISSN: 00262714     EISSN: None     Source Type: Journal    
DOI: 10.1016/0026-2714(96)00241-7     Document Type: Article

References (7)

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7. L.K.J. Vandamme, Noise as a diagnostic tool for quality and reliability of electron devices, IEEE Trans Electr. Dev. 41, 2176-2187 (1994).