Development and characterization of semiconductor ion detectors for plasma diagnostics in the range over 0.3 keV

Review of Scientific Instruments

Volumn 68, Issue 1, 1997, Pages 324-327

  Cho, T ^a   Sakamoto, Y ^a   Hirata, M ^a   Kohagura, J ^a   Makino, K ^a   Kanke, S ^a   Takahashi, K ^a   Okamura, T ^a   Nakashima, Y ^a   Yatsu, K ^a   Tamano, T ^a   Miyoshi, S ^a  

^a UNIVERSITY OF TSUKUBA   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ION BEAMS; MAGNETIC FIELDS; PLASMA DIAGNOSTICS; SIGNAL TO NOISE RATIO; SILICA; SILICON WAFERS; SPECTROMETERS; SURFACE STRUCTURE; SYNCHROTRON RADIATION; VACUUM; X RAYS;

FARADAY CUP; INCIDENT ION ENERGY; LOWEST ION ENERGY; METAL PLATE COLLECTOR; SEMICONDUCTOR ION DETECTORS;

PARTICLE DETECTORS;

EID: 0030736546     PISSN: 00346748     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1147923     Document Type: Article

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