Hole tunneling through highly transparent symmetric double-barrier semiconductor structures

Solid State Communications

Volumn 101, Issue 4, 1997, Pages 257-261

  Zhu, J X ^a,b   Wang, Z D ^b   Gong, C D ^a  

^a NANJING UNIVERSITY   (China)

^b UNIVERSITY OF HONG KONG   (Hong Kong)

Author keywords

A. quantum wells A; Semiconductor D; Tunneling

Indexed keywords

BAND MIXING EFFECTS; HOLE TUNNELING; POTENTIAL WELL; SYMMETRIC DOUBLE-BARRIER SEMICONDUCTORS; TRANSMISSION COEFFICIENT;

BAND STRUCTURE; ELECTRON TUNNELING; ELECTRONIC DENSITY OF STATES; MATHEMATICAL MODELS; QUANTUM THEORY; SEMICONDUCTOR MATERIALS;

SEMICONDUCTOR QUANTUM WELLS;

EID: 0030736335     PISSN: 00381098     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0038-1098(96)00569-8     Document Type: Article

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