Charge-to-breakdown characteristics of thin gate oxide and buried oxide on SIMOX SOI wafers

Journal of the Electrochemical Society

Volumn 144, Issue 1, 1997, Pages 375-378

  Seo, Jin Ho ^a   Woo, Jason C ^a   Mendicino, Mike ^b   Vasudev, P K ^b  

^a UNIVERSITY OF CALIFORNIA   (United States)

^b SEMATECH   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CAPACITORS; CRYSTAL DEFECTS; ELECTRIC BREAKDOWN; ELECTRIC CHARGE; GATES (TRANSISTOR); MOSFET DEVICES; OXIDES; SILICON ON INSULATOR TECHNOLOGY; SUBSTRATES;

BURIED OXIDE; THIN GATE OXIDE;

SILICON WAFERS;

EID: 0030736166     PISSN: 00134651     EISSN: None     Source Type: Journal    
DOI: 10.1149/1.1837413     Document Type: Article

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