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Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

Volumn 122, Issue 1, 1997, Pages 45-50

Annealing behaviour of c-SiO2 implanted layer distributed with high density Ag nanoparticles

(2) Liu, Zhengxin a Wang, Honghong a

a TSINGHUA UNIVERSITY (China)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; ATOMS; FILMS; NANOSTRUCTURED MATERIALS; RAMAN SPECTROSCOPY; RUTHERFORD BACKSCATTERING SPECTROSCOPY; SILICA; SILVER; THERMODYNAMIC STABILITY; TRANSMISSION ELECTRON MICROSCOPY;

ABNORMAL BIMODAL DISTRIBUTION; NANOPARTICLES;

ION IMPLANTATION;

EID: 0030736026 PISSN: 0168583X EISSN: None Source Type: Journal
DOI: 10.1016/S0168-583X(96)00689-1 Document Type: Article

Times cited : (10)

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