Preparation and electrical properties of Ba0.6Sr0.4TiO3thin films deposited by the sol-gel method

Physica Scripta T

Volumn 69, Issue , 1997, Pages 332-335

  Wang, Fan ^a   Uusimäki, Antti ^a   Leppävuori, Seppo ^a  

^a UNIVERSITY OF OULU   (Finland)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; BARIUM COMPOUNDS; CURRENT DENSITY; DIELECTRIC RELAXATION; ELECTRIC PROPERTIES; FILM PREPARATION; FIRING (OF MATERIALS); MORPHOLOGY; PERMITTIVITY; SCANNING ELECTRON MICROSCOPY; SOL-GELS; X RAY DIFFRACTION;

BARIUM STRONTIUM TITANATE; DEBYE TYPE DIELECTRIC RELAXATION; LEAKAGE CURRENT DENSITY; LOSS FACTOR; SOL GEL PROCESSING; STOCK SOLUTION; THIN FILM CAPACITORS;

THIN FILMS;

EID: 0030735860     PISSN: 02811847     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1088/0031-8949/1997/t69/072     Document Type: Article

References (15)

1. Roy, D. and Krupanidhi, S. B., Appl. Phys. Lett. 62, 1056 (1993).
2. Scott, J. F. et al., J. Appl. Phys. 64, 787 (1988).
3. Horikawa, T. et al., Jpn. J. Appl. Phys. 32, 4126 (1993).
4. Babbitt, R. W., Koscica, T. E. and Drach, W. C., Microwave Journal 35, 63 (1992).
5. Carroll, K. R. et al., Appl-Phys. Lett. 62, 1845 (1993).
6. Arlt, G., Hennings, D. and With, G. de., J. Appl. Phys. 58, 1619 (1985).
7. Kawano, H., Morii, K. and Nakayama, Y., J. Appl. Phys. 73, 5141 (1993).
8. Soon-Gil Yoon, Jai-Chan Lee and Safari, A., J. Appl. Phys. 76, 2999 (1994).
9. Abe, K. and Komatsu, S., J. Appl. Phys. 77, 6461 (1995).
10. Ivanov, D. et al., J. Appl. Phys. 77, 2666 (1995).
11. Wang, F. Uusimäki, A. and Leppävuori, S., Appl. Phys. Lett. 67, 1692 (1995).
12. Li, P. and Lu, T.-M., Appl. Phys. Lett, 59, 1064 (1991).
13. Joshi, P. C. and Krupanidhi, S. B., Appl. Phys. Lett. 61. 1525 (1992).
14. Jonson, D. W., Cross, L. E. and Hummel, F. A., J. Appl. Phys. 41, 2828 (1970).
15. Mansingh, A. and Krupanidhi, S. B., Thin Solid Film 80, 359 (1981).