Temperature-dependent facet development in the deposition of GaInP on non-planar surfaces

Surface Science

Volumn 370, Issue 2-3, 1997, Pages 179-189

  Bastos, P L ^a,b   Anders, M J ^a   Bongers, M M G ^a   Schermer, J J ^a   Giling, L J ^a  

^a RADBOUD UNIVERSITY NIJMEGEN   (Netherlands)

^b PONTIFICAL CATHOLIC UNIVERSITY OF RIO DE JANEIRO   (Brazil)

Author keywords

Alloys; Chemical vapor deposition; Computer simulations; Epitaxy; Faceting; Phosphine; Scanning electron microscopy (SEM); Semiconducting films; Semiconducting surfaces; Semiconductor semiconductor thin film structures; Single crystal epitaxy

Indexed keywords

COMPUTER SIMULATION; CRYSTAL ORIENTATION; DEPOSITION; GALLIUM ALLOYS; INTERFACES (MATERIALS); INTERFACIAL ENERGY; STABILITY; SUBSTRATES; SURFACE STRUCTURE; SURFACES; THERMAL EFFECTS; VAPOR PHASE EPITAXY;

FACETING; GALLIUM INDIUM PHOSPHIDE; SURFACE CONCENTRATION; SURFACE RECONSTRUCTION;

SEMICONDUCTING GALLIUM ARSENIDE;

EID: 0030734724     PISSN: 00396028     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0039-6028(96)00965-X     Document Type: Article

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