Plasma CVD of high quality titanium nitride using titanium(IV)isopropoxide as precursor

Microelectronic Engineering

Volumn 33, Issue 1-4, 1997, Pages 277-282

  Weber, A ^a   Poeckelmann, R ^a   Klages, C P ^a  

^a FRAUNHOFER INSTITUTE FOR SURFACE ENGINEERING AND THIN FILMS IST   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

CHEMICAL VAPOR DEPOSITION; ELECTRIC CONDUCTIVITY MEASUREMENT; ELECTRON CYCLOTRON RESONANCE; ORGANOMETALLICS; PLASMA APPLICATIONS; SECONDARY ION MASS SPECTROMETRY; SUBSTRATES; THIN FILMS; TITANIUM OXIDES; X RAY DIFFRACTION ANALYSIS;

CHEMICAL IONIZATION MASS SPECTROMETRY (CIMS); PLASMA CHEMICAL VAPOUR DEPOSITION (CVD); TITANIUM(IV) ISOPROPOXIDE (TIP);

TITANIUM NITRIDE;

EID: 0030730831     PISSN: 01679317     EISSN: None     Source Type: Journal    
DOI: 10.1016/s0167-9317(96)00055-x     Document Type: Article

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