Analysis of the carrier and temperature distributions in gate turn-off thyristors by internal laser deflection

IEEE International Symposium on Power Semiconductor Devices & ICs (ISPSD)

Volumn , Issue , 1997, Pages 177-180

  Simmnacher, B ^a   Deboy, G ^a   Ruff, M ^a   Schulze, H J ^a   Kolbesen, B ^a  

^a SIEMENS AG   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

CARRIER CONCENTRATION; COMPUTER SIMULATION; ELECTRIC BREAKDOWN OF SOLIDS; ELECTRIC CONDUCTIVITY OF SOLIDS; LASER BEAM EFFECTS; SEMICONDUCTOR DEVICE STRUCTURES; SILICON; TEMPERATURE DISTRIBUTION; TEMPERATURE MEASUREMENT;

CARRIER LIFETIME REDUCTION; INTERNAL LASER DEFLECTION; SOFTWARE PACKAGE MEDICI;

THYRISTORS;

EID: 0030721271     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (3)