Transistor operations in 30-nm-gate-length EJ-MOSFETs

Annual Device Research Conference Digest

Volumn , Issue , 1997, Pages 14-15

  Kawaura, Hisao ^a   Sakamoto, Toshitsugu ^a   Baba, Toshio ^a   Ochiai, Yukinori ^a   Fujita, Jun'ichi ^a   Matsui, Shinji ^a   Sone, Jun'ichi ^a  

^a NEC CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ARSENIC; CHEMICAL VAPOR DEPOSITION; CURRENT VOLTAGE CHARACTERISTICS; ELECTRON BEAM LITHOGRAPHY; GATES (TRANSISTOR); JUNCTION GATE FIELD EFFECT TRANSISTORS; SEMICONDUCTING BORON; SEMICONDUCTOR DOPING;

ELECTRICALLY VARIABLE SHALLOW JUNCTION MOSFETS (EJMOSFET); SHORT CHANNEL EFFECTS; THRESHOLD VOLTAGE;

MOSFET DEVICES;

EID: 0030721044     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (3)