Modeling stress effects on thin oxide growth kinetics

International Conference on Simulation of Semiconductor Processes and Devices, SISPAD

Volumn , Issue , 1997, Pages 49-52

  Huang, S F ^a   Griffin, P B ^a   Plummer, J D ^a   Rissman, P ^a  

^a STANFORD UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

COMPUTER SIMULATION; CURRENT VOLTAGE CHARACTERISTICS; LEAKAGE CURRENTS; OXIDATION; OXIDES; REACTION KINETICS; SEMICONDUCTING SILICON; STRESSES; THERMAL EFFECTS; THIN FILMS;

NON PLANAR STRUCTURE; OXIDATION KINETICS; STRESS EFFECT; THERMAL OXIDATION; THIN OXIDE;

FILM GROWTH;

EID: 0030719727     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (6)