Interface roughness in strained Si/SiGe multilayers

Materials Research Society Symposium - Proceedings

Volumn 448, Issue , 1997, Pages 153-158

  Darhuber, A A ^a   Holy, V ^a   Stangl, J ^a   Bauer, G ^a   Nuetzel, J ^a   Abstreiter, G ^a  

^a JOHANNES KEPLER UNIVERSITY LINZ   (Austria)

Author keywords

[No Author keywords available]

Indexed keywords

APPROXIMATION THEORY; INTERFACES (MATERIALS); MATHEMATICAL MODELS; MORPHOLOGY; SEMICONDUCTING SILICON; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR GROWTH; SUBSTRATES; SURFACE ROUGHNESS; X RAY ANALYSIS;

DIFFUSE X RAY REFLECTION; DISTORTED WAVE BORN APPROXIMATION (DWBA); STAIRCASE MODEL;

MULTILAYERS;

EID: 0030719653     PISSN: 02729172     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (15)