Optical and electrical characterisation study of SiCl4 reactive ion etched GaAs

Materials Research Society Symposium - Proceedings

Volumn 442, Issue , 1997, Pages 75-80

  Murtagh, M ^a   Ye, Shu Ren ^a   Masterson, H J ^a   Beechinor, J T ^a   Crean, G M ^a   Auret, F D ^a   Deenapanray, P N K ^a   Meyer, W E ^a   Goodman, S A ^a   Myburg, G ^a  

^a UNIVERSITY COLLEGE CORK   (Ireland)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC FORCE MICROSCOPY; BAND STRUCTURE; CURRENT VOLTAGE CHARACTERISTICS; DEEP LEVEL TRANSIENT SPECTROSCOPY; ION BOMBARDMENT; PHOTOLUMINESCENCE; REACTIVE ION ETCHING; SCHOTTKY BARRIER DIODES; SEMICONDUCTING SILICON; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR PLASMAS; SURFACE TREATMENT;

CAPACITANCE VOLTAGE ANALYSIS; ELECTRICAL CHARACTERIZATION; OPTICAL CHARACTERIZATION; PHOTOREFLECTANCE; SILICON TETRACHLORIDE; VARIABLE ANGLE SPECTROSCOPIC ELLIPSOMETRY;

SEMICONDUCTING GALLIUM ARSENIDE;

EID: 0030719121     PISSN: 02729172     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (10)