Electrical characterization of defects introduced during plasma-based processing of GaAs

Materials Research Society Symposium - Proceedings

Volumn 442, Issue , 1997, Pages 51-62

  Auret, F D ^a   Myburg, G ^a   Meyer, W E ^a   Deenapanray, P N K ^a   Nordhoff, H ^a   Murtagh, M ^a   Ye, Shu Ren ^a   Masterson, H J ^a   Beechinor, J T ^a   Crean, G M ^a  

^a UNIVERSITY OF PRETORIA   (South Africa)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTAL DEFECTS; CURRENT VOLTAGE CHARACTERISTICS; DEEP LEVEL TRANSIENT SPECTROSCOPY; HELIUM; ION BOMBARDMENT; PLASMA ETCHING; SCHOTTKY BARRIER DIODES; SILICON COMPOUNDS; SPECTROSCOPY;

CAPACITANCE VOLTAGE MEASUREMENT; ELECTRICAL CHARACTERIZATION; SILICON TETRACHLORIDE;

SEMICONDUCTING GALLIUM ARSENIDE;

EID: 0030718899     PISSN: 02729172     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (24)