Growth rate of yttria-stabilized zirconia thin films formed by electrochemical vapor-deposition using NiO as an oxygen source

Solid State Ionics

Volumn 93, Issue 3-4, 1997, Pages 187-192

  Inaba, Minoru ^a   Mineshige, Atsushi ^a   Maeda, Tomoyuki ^a   Nakanishi, Shinji ^a   Takahashi, Tadayoshi ^b   Tasaka, Akimasa ^b   Kikuchi, Kenji ^c   Ogumi, Zempachi ^a  

^a KYOTO UNIVERSITY   (Japan)

^b DOSHISHA UNIVERSITY   (Japan)

^c UNIVERSITY OF SHIGA PREFECTURE   (Japan)

Author keywords

Electrochemical vapor deposition; Growth rate; Nickel oxide; Thin film; Yttria stabilized zirconia

Indexed keywords

DOPING (ADDITIVES); ELECTROCHEMISTRY; FILM GROWTH; NICKEL COMPOUNDS; OXIDES; THIN FILMS; VAPOR DEPOSITION; YTTRIUM;

ELECTROCHEMICAL VAPOR DEPOSITION;

ZIRCONIA;

EID: 0030717884     PISSN: 01672738     EISSN: None     Source Type: Journal    
DOI: 10.1016/s0167-2738(96)00560-7     Document Type: Article

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