Study of plasma charging and photoresist coating effects using UV-erased FLASH cell as charging sensor

International Symposium on Plasma Process-Induced Damage, P2ID, Proceedings

Volumn , Issue , 1997, Pages 237-240

  Alba, S ^a   Colognese, A ^a   Ghio, E ^a   Maugain, F ^a   Rivera, G ^a  

^a STMICROELECTRONICS   (Italy)

Author keywords

[No Author keywords available]

Indexed keywords

COATING TECHNIQUES; ELECTRON TUNNELING; OXIDES; PHOTORESISTS; PROM; SEMICONDUCTOR STORAGE; SENSORS; ULTRAVIOLET DEVICES; VOLTAGE MEASUREMENT;

CHARGE COLLECTION ELECTRODE (CCE); ERASABLE ELECTRONICALLY PROGRAMMABLE READ ONLY MEMORY (EEPROM); PLASMA CHARGING;

PLASMA ETCHING;

EID: 0030716581     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (3)