Fast parallel programming of multi-level NAND flash memory cells using the booster-line technology

Digest of Technical Papers - Symposium on VLSI Technology

Volumn , Issue , 1997, Pages 65-66

  Kim, H S ^a   Choi, J D ^a   Kim, J ^a   Shin, W C ^a   Kim, D J ^a   Mang, K M ^a   Ahn, S T ^a  

^a SAMSUNG Electronics   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

CELLULAR ARRAYS; MICROPROGRAMMING; NAND CIRCUITS; PARALLEL PROCESSING SYSTEMS;

MULTI LEVEL FLASH MEMORY CELLS;

SEMICONDUCTOR STORAGE;

EID: 0030715836     PISSN: 07431562     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/vlsit.1997.623697     Document Type: Conference Paper

References (4)