Raman scattering and photoluminescence of Mg-doped GaN films grown by molecular-beam epitaxy

Materials Research Society Symposium - Proceedings

Volumn 468, Issue , 1997, Pages 219-224

  Popovici, G ^a   Xu, G Y ^a   Botchkarev, A ^a   Kim, W ^a   Tang, H ^a   Salvador, A ^a   Strange, R ^a   White, J O ^a   Morkoc, H ^a  

^a UNIVERSITY OF ILLINOIS AT URBANA CHAMPAIGN   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

HALL EFFECT; MANGANESE; MOLECULAR BEAM EPITAXY; NITRIDES; PHOTOLUMINESCENCE; RAMAN SCATTERING; SEMICONDUCTOR DOPING; THIN FILMS;

CRYSTALLINE QUALITY;

SEMICONDUCTING GALLIUM COMPOUNDS;

EID: 0030714389     PISSN: 02729172     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1557/proc-468-219     Document Type: Conference Paper

References (15)