Growth of Tl-containing III-V materials by gas source molecular beam epitaxy

Conference Proceedings - International Conference on Indium Phosphide and Related Materials

Volumn , Issue , 1997, Pages 444-447

  Antonell, M J ^a   Abernathy, C R ^a   Sher, A ^a   Berding, M ^a   Van Schilfgaarde, M ^a  

^a UNIVERSITY OF FLORIDA   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ALLOYING; CRYSTAL STRUCTURE; INDIUM ALLOYS; MOLECULAR BEAM EPITAXY; OXIDATION; STOICHIOMETRY; SYNTHESIS (CHEMICAL); THALLIUM COMPOUNDS; THERMAL EFFECTS;

GAS SOURCE MOLECULAR BEAM EPITAXY (GSMBE);

SEMICONDUCTING INDIUM PHOSPHIDE;

EID: 0030713637     PISSN: 10928669     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (10)