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Volumn 170, Issue 1-4, 1997, Pages 215-218

Reflectance anisotropy as an in situ monitor for the growth of InP on (001) InP by pseudo-atmospheric pressure atomic layer epitaxy

Author keywords

[No Author keywords available]

Indexed keywords

ANISOTROPY; EPITAXIAL GROWTH; LIGHT REFLECTION; SEMICONDUCTING INDIUM PHOSPHIDE; SEMICONDUCTOR GROWTH;

SINGLE WAVELENGTH REFLECTANCE SPECTROSCOPY;

METALLORGANIC CHEMICAL VAPOR DEPOSITION;

EID: 0030713609 PISSN: 00220248 EISSN: None Source Type: Journal
DOI: 10.1016/S0022-0248(96)00515-5 Document Type: Article

Times cited : (3)

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