Formation of an atomically flat surface of ZnSe on GaAs (001) by metallorganic vapor phase epitaxy

Japanese Journal of Applied Physics, Part 2: Letters

Volumn 36, Issue 1 A-B, 1997, Pages

  Funato, Mitsuru ^a   Aoki, Satoshi ^a   Fujita, Shizuo ^a   Fujita, Shigeo ^a  

^a KYOTO UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; ATOMIC FORCE MICROSCOPY; CRYSTAL GROWTH; METALLORGANIC VAPOR PHASE EPITAXY; MORPHOLOGY; SEMICONDUCTING GALLIUM ARSENIDE; THERMAL EFFECTS;

ATOMICALLY FLAT SURFACES; ZINC SELENIDE;

SEMICONDUCTING ZINC COMPOUNDS;

EID: 0030711932     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.36.l4     Document Type: Article

References (8)