Elaboration and light emission properties of low doped p-type porous silicon microcavities

Materials Research Society Symposium - Proceedings

Volumn 452, Issue , 1997, Pages 711-716

  Lerondel, G ^a   Ferrand, P ^a   Romestain, R ^a  

^a Laboratoire de Spectrometrie Physique   (France)

Author keywords

[No Author keywords available]

Indexed keywords

BAND STRUCTURE; CHARACTERIZATION; CURRENT DENSITY; ELECTRON ENERGY LEVELS; FABRY-PEROT INTERFEROMETERS; INTERFACES (MATERIALS); LIGHT EMISSION; LUMINESCENCE; REFRACTIVE INDEX; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR DOPING;

BRAGG REFLECTORS; FABRY-PEROT FILTERS; LUMINESCENCE EFFICIENCY; MICROCAVITIES;

SEMICONDUCTING SILICON;

EID: 0030707976     PISSN: 02729172     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (7)