Electrochemical formation of ZnS screens

Journal of the Society for Information Display

Volumn 5, Issue 2, 1997, Pages 87-92

  Colletti, L P ^a,b   Slaughter, R ^a   Stickney, J L ^a  

^a UNIVERSITY OF GEORGIA   (United States)

^b LOS ALAMOS NATIONAL LABORATORY   (United States)

Author keywords

ECALE; Electrochemical atomic layer epitaxy; Electrochemistry; Phosphors; Thin films; ZnS

Indexed keywords

BOROSILICATE GLASS; ELECTROCHEMISTRY; ELECTRODEPOSITION; EPITAXIAL GROWTH; FILM GROWTH; MICROANALYSIS; MORPHOLOGY; SCANNING ELECTRON MICROSCOPY; SILICON WAFERS; THIN FILMS; X RAY DIFFRACTION ANALYSIS; ZINC SULFIDE;

ELECTROCHEMICAL ATOMIC LAYER EPITAXY (ECALE);

PHOSPHORS;

EID: 0030706796     PISSN: 10710922     EISSN: None     Source Type: Journal    
DOI: 10.1889/1.1985134     Document Type: Article

References (9)

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8. L P Colletti, S Thomas, E M Wilmer, et al, "Thin layer electrochemical studies of ZnS, ZnSe, and ZnTe formation by Electrochemical Atomic Layer Epitaxy (ECALE)," J Electrochem Soc (to be published).
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