Submicron Bi-CMOS-DMOS process for 20-30 and 50 V applications

IEEE International Symposium on Power Semiconductor Devices & ICs (ISPSD)

Volumn , Issue , 1997, Pages 333-336

  Nezar, A ^a   Ludikhuize, A W ^a   Brock, R ^a   Nowlin, N ^a  

^a NXP SEMICONDUCTORS   (Netherlands)

Author keywords

[No Author keywords available]

Indexed keywords

BIPOLAR TRANSISTORS; DIFFUSION IN SOLIDS; GATES (TRANSISTOR); INTEGRATED CIRCUIT MANUFACTURE; MOSFET DEVICES;

LATERAL DOUBLE DIFFUSED MOS (LDMOS) TRANSISTORS;

CMOS INTEGRATED CIRCUITS;

EID: 0030706761     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (3)