Novel time domain characterization technique of intermodulation in microwave transistors. Application to the visualization of the distortion of high efficiency power amplifiers

IEEE MTT-S International Microwave Symposium Digest

Volumn 3, Issue , 1997, Pages 1687-1690

  Barataud, D ^a   Mallet, A ^a   Fraysse, J Ph ^a   Blache, F ^a   Campovecchio, M ^a   Nebus, J M ^a   Villotte, J P ^a   Verspecht, J ^a  

^a Centre National de la Recherche Scientifique   (France)

Author keywords

[No Author keywords available]

Indexed keywords

FIELD EFFECT TRANSISTORS; HETEROJUNCTION BIPOLAR TRANSISTORS; INTERMODULATION; MATHEMATICAL MODELS; MICROWAVE DEVICES; OPTIMIZATION; TIME DOMAIN ANALYSIS;

MICROWAVE TRANSISTORS;

POWER AMPLIFIERS;

EID: 0030705669     PISSN: 0149645X     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (10)