Hydrogen induced passivation and generation of defects in polycrystalline silicon

Physica Status Solidi (A) Applied Research

Volumn 159, Issue 1, 1997, Pages 65-74

  Nickel, N H ^a,b   Jackson, W B ^a   Johnson, N M ^a   Walker, J ^a  

^a PALO ALTO RESEARCH CENTER   (United States)

^b HAHN MEITNER INSTITUT   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTAL DEFECTS; ELECTRIC CONDUCTIVITY MEASUREMENT; FERMI LEVEL; HALL EFFECT; HYDROGEN; PASSIVATION; POLYCRYSTALLINE MATERIALS; TEMPERATURE;

POLYCRYSTALLINE SILICON; SPIN DENSITY;

SEMICONDUCTING SILICON;

EID: 0030705340     PISSN: 00318965     EISSN: None     Source Type: Journal    
DOI: 10.1002/1521-396X(199701)159:1<65::AID-PSSA65>3.0.CO;2-4     Document Type: Article

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