Channel profile control based on transient-enhanced-diffusion suppression by RTA for 0.18 μm single gate CMOS

Digest of Technical Papers - Symposium on VLSI Technology

Volumn , Issue , 1997, Pages 87-88

  Furukawa, A ^a   Teramoto, A ^a   Shimizu, S ^a   Abe, Y ^a   Tokuda, Y ^a  

^a MITSUBISHI ELECTRIC CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; CMOS INTEGRATED CIRCUITS; DIFFUSION IN SOLIDS; GATES (TRANSISTOR); HOT CARRIERS; ION IMPLANTATION; OXIDATION; SEMICONDUCTOR DOPING; THERMAL EFFECTS; TRANSCONDUCTANCE; TRANSIENTS; VOLTAGE MEASUREMENT;

TRANSIENT ENHANCED DIFFUSION (TED);

MOSFET DEVICES;

EID: 0030704851     PISSN: 07431562     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (5)