P-type conductivity with a high hole mobility in cubic GaN/GaAs epilayers

Materials Research Society Symposium - Proceedings

Volumn 449, Issue , 1997, Pages 615-620

  As, D J ^a   Ruther, A ^a   Lubbers, M ^a   Mimkes, J ^a   Lischka, K ^a   Schikora, D ^a  

^a UNIVERSITY OF PADERBORN   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC CONDUCTIVITY; EPITAXIAL GROWTH; MOLECULAR BEAM EPITAXY; PHONONS; REFLECTION HIGH ENERGY ELECTRON DIFFRACTION; SEMICONDUCTING GALLIUM ARSENIDE;

EPILAYERS; HOLE MOBILITY; NITRIDE SEMICONDUCTORS; POLAR OPTICAL PHONON SCATTERING;

SEMICONDUCTING GALLIUM COMPOUNDS;

EID: 0030704355     PISSN: 02729172     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (17)