Gate tunneling current in thin oxide MOSFET

IEEE International Conference on Semiconductor Electronics, Proceedings, ICSE

Volumn , Issue , 1997, Pages 287-292

  Karim, Mohammed Fakhrul ^a   Shaari, Sahbudin ^a   Majlis, Burhanuddin Yeop ^a  

^a UNIVERSITI KEBANGSAAN MALAYSIA   (Malaysia)

Author keywords

[No Author keywords available]

Indexed keywords

BAND STRUCTURE; COMPUTATIONAL METHODS; ELECTRIC CONDUCTIVITY OF SOLIDS; ELECTRIC RESISTANCE; ELECTRON ENERGY LEVELS; ELECTRON TUNNELING; INSULATING MATERIALS; MATHEMATICAL MODELS; QUANTUM ELECTRONICS; SEMICONDUCTING SILICON COMPOUNDS; SILICA; THIN FILMS;

QUANTUM MECHANICAL TUNNELING;

MOSFET DEVICES;

EID: 0030703770     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (15)