Gated diamond field emitter array with ultra low operating voltage and high emission current

Annual Device Research Conference Digest

Volumn , Issue , 1997, Pages 150-151

  Wisitsora at, A ^a   Kang, W P ^a   Davidson, J L ^a   Howell, M ^a   Li, Q ^a   Xu, J F ^a   Kerns, D V ^a  

^a VANDERBILT UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CHEMICAL VAPOR DEPOSITION; DIELECTRIC MATERIALS; ELECTRIC CURRENTS; ELECTROSTATIC COATINGS; PLASMA ETCHING; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING DIAMONDS; SEMICONDUCTOR DOPING; SILICA; SUBSTRATES; VACUUM TECHNOLOGY;

GATED DIAMOND FIELD EMITTER ARRAY; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION (PECVD); VOLTAGE THERMAL ELECTRIC (VTE) TREATMENT;

FIELD EMISSION CATHODES;

EID: 0030702670     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (0)