Monte Carlo study of diffusion phenomena in III-V modulation doped heterostructures

Semiconductor Science and Technology

Volumn 12, Issue 1, 1997, Pages 69-76

  Sleiman, A ^a   Thobel, J L ^a   Bourel, P ^a   Dessenne, F ^a   Fauquembergue, R ^a  

^a INSTITUT D ELECTRONIQUE   (France)

Author keywords

[No Author keywords available]

Indexed keywords

CHARGE CARRIERS; CRYSTAL IMPURITIES; CRYSTAL LATTICES; DIFFUSION; ELECTRON SCATTERING; MATHEMATICAL MODELS; MONTE CARLO METHODS; PHONONS; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR DOPING; THERMAL EFFECTS;

EINSTEIN RELATION; TWO DIMENSIONAL ELECTRON GAS;

HETEROJUNCTIONS;

EID: 0030702344     PISSN: 02681242     EISSN: None     Source Type: Journal    
DOI: 10.1088/0268-1242/12/1/014     Document Type: Article

References (20)

1. Drummond T J, Masselink W T and Morkoc H 1986 Proc. IEEE 74 773
2. Cappy A, Schortgen M and Salmer G 1985 IEEE Electron Device Lett. 6 270
3. Jacoboni C and Lugli P 1989 The Monte Carlo Method for Semiconductor Device Simulation (Vienna: Springer)
4. Zimmermann J, Yen W and Perri F 1985 Physica B 129 385
5. Thobel J L, Baudry L, Bourel P, Dessenne F and Charef M 1993 J. Appl. Phys. 74 6274
6. Zimmermann J and Wu Yen 1987 Rev. Phys. Appl. 22 1501-13
7. Fauquembergue R, Zimmermann J, Kaszynski A and Constant E 1980 J. Appl. Phys. 51 1065
8. Alamkan J, Happy H, Cordier Y and Cappy A 1990 Eur. Trans. Telecommun. Relat. Technol. 1 429
9. Ben Daniel D J and Duke C B 1966 Phys. Rev. 152 683
10. Tanimoto H, Yasuda N, Taniguchi K and Hamaguchi C 1988 Japan. J. Appl. Phys. 27 563
11. Kobayashi E, Hamayuchi C, Matsuoka T and Taniguchi K 1989 IEEE Trans. Electron. Devices 36 2353
12. Thobel J L, Sleiman A, Bourel P and Dessenne F 1996 J. Appl. Phys. 80 928
13. Stern F and Howard W E 1967 Phys. Rev. 163 816
14. Adachi S 1982 J. Appl. Phys. 53 8875
15. Adachi S 1985 J. Appl. Phys. 58 R1
16. Basu P K and Nag B R 1983 Appl. Phys. Lett. 43 689
17. Saxena A K and Adams A R 1985 J. Appl. Phys. 58 2640
18. Thobel J L, Baudry L, Cappy A, Bourel P and Fauquembergue R 1990 Appl. Phys. Lett. 56 346
19. Brennan K 1986 IEEE Trans. Electron Devices 33 1502
20. Welch D F, Wicks G W and Eastman L F 1984 J. Appl. Phys. 55 3176