Depth gradients in porous silicon: how to measure them and how to avoid them

Materials Research Society Symposium - Proceedings

Volumn 452, Issue , 1997, Pages 431-436

  Thoenissen, M ^a   Berger, M G ^a   Theiss, W ^a   Hilbrich, S ^a   Krueger, M ^a   Arens Fischer, R ^a   Billat, S ^a   Lerondel, G ^a   Lueth, H ^a  

^a FORSCHUNGSZENTRUM JÜLICH   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

ANODIC OXIDATION; ETCHING; MICROSTRUCTURE; POROSITY; REFRACTIVE INDEX; SUBSTRATES;

ANODIZATION; DEPTH GRADIENT; ETCH RATE; OPTICAL THICKNESS; REFLECTANCE SPECTRA;

POROUS SILICON;

EID: 0030699718     PISSN: 02729172     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (13)