Low-temperature formation of device-quality polysilicon films by cat-CVD method

Materials Research Society Symposium - Proceedings

Volumn 452, Issue , 1997, Pages 983-988

  Matsumura, Hideki ^a   Heya, Akira ^a   Iizuka, Ritsuko ^a   Izumi, Akira ^a   He, An Qiang ^a   Otsuka, Nobuo ^a  

^a JAPAN ADVANCED INSTITUTE OF SCIENCE AND TECHNOLOGY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CHARGE CARRIERS; CHEMICAL VAPOR DEPOSITION; HYDROGEN; LIGHT ABSORPTION; LOW TEMPERATURE OPERATIONS; OPTICAL PROPERTIES; POLYCRYSTALLINE MATERIALS; SEMICONDUCTING SILICON; SILANES; SOLAR CELLS; THIN FILM TRANSISTORS;

CARRIER MOBILITY; CARRIER TRANSPORT; LOW TEMPERATURE FORMATION; POLYCRYSTALLINE SILICON; THIN FILM SOLAR CELL;

THIN FILMS;

EID: 0030699044     PISSN: 02729172     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (11)