Preparation and characterization of the active layer for an LED based on oxidized porous silicon

Materials Research Society Symposium - Proceedings

Volumn 452, Issue , 1997, Pages 687-692

  Tsybeskov, L ^a   Hirschman, K D ^a   Moore, L F ^a   Fauchet, P M ^a   Calcott, P D J ^a  

^a UNIVERSITY OF ROCHESTER   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; ANODIC OXIDATION; BAND STRUCTURE; CHARACTERIZATION; ELECTRON ENERGY LEVELS; ELECTRON TRANSPORT PROPERTIES; LEAKAGE CURRENTS; PHOTOLUMINESCENCE; POROUS MATERIALS; SEMICONDUCTING SILICON;

BAND TAIL RECOMBINATION; CARRIER TRANSPORT; DEFECT CENTERS; OXIDIZED POROUS SILICON; RED BAND EMISSION;

LIGHT EMITTING DIODES;

EID: 0030698588     PISSN: 02729172     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (19)