Growth mechanism of microcrystalline silicon deposited by ECRCVD

Materials Research Society Symposium - Proceedings

Volumn 452, Issue , 1997, Pages 773-778

  Beckers, I ^a   Conrad, E ^a   Mueller, P ^a   Nickel, N H ^a   Sieber, I ^a   Fuhs, W ^a  

^a HAHN MEITNER INSTITUT   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

CHEMICAL VAPOR DEPOSITION; CRYSTAL GROWTH; CRYSTALLINE MATERIALS; ELECTRON CYCLOTRON RESONANCE; ETCHING; FILM PREPARATION; RAMAN SCATTERING; SCANNING ELECTRON MICROSCOPY; THIN FILMS;

CRYSTALLINITY; DILUTION; ELECTRON CYCLOTRON RESONANCE CHEMICAL VAPOR DEPOSITION; MICROCRYSTALLINE SILICON; RAMAN BACKSCATTERING;

SILICON;

EID: 0030698587     PISSN: 02729172     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (14)