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Volumn 446, Issue , 1997, Pages 67-78
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Nitrided silicon oxide gate dielectrics for submicron device technology
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Author keywords
[No Author keywords available]
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Indexed keywords
ANNEALING;
ATOMS;
CHEMICAL BONDS;
CHEMICAL RELAXATION;
CRYSTAL DEFECTS;
FIELD EFFECT TRANSISTORS;
GATES (TRANSISTOR);
INTERFACES (MATERIALS);
MONOLAYERS;
PLASMA APPLICATIONS;
POLYCRYSTALLINE MATERIALS;
SILICON NITRIDE;
STRUCTURAL RELAXATION;
DIELECTRIC FILMS;
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EID: 0030695785
PISSN: 02729172
EISSN: None
Source Type: Conference Proceeding
DOI: None Document Type: Conference Paper |
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Times cited : (2)
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References (32)
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