Record low threshold 840 nm laterally oxidized vertical cavity lasers using AlInGaAs/AlGaAs strained active layers

Conference Proceedings - Lasers and Electro-Optics Society Annual Meeting-LEOS

Volumn 11, Issue , 1997, Pages 289-290

  Ko, Jack ^a   Hegblom, Eric R ^a   Akulova, Yuliya ^a   Thibeault, Brian J ^a   Coldren, Larry A ^a  

^a UNIVERSITY OF CALIFORNIA   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; CURRENT DENSITY; EPITAXIAL GROWTH; ETCHING; MIRRORS; OXIDATION; OXIDES; PHOTOLITHOGRAPHY; PHOTONS; SEMICONDUCTING ALUMINUM COMPOUNDS; STRAIN; SUBSTRATES;

VERTICAL CAVITY LASERS (VCL);

QUANTUM WELL LASERS;

EID: 0030695618     PISSN: 10928081     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (6)