Avalanche injection in high voltage Si P-i-N diodes measurements and device simulations

IEEE International Symposium on Power Semiconductor Devices & ICs (ISPSD)

Volumn , Issue , 1997, Pages 125-128

  Domeij, Martin ^a   Breitholtz, Bo ^a   Linnros, Jan ^a   Ostling, Mikael ^a  

^a ROYAL INSTITUTE OF TECHNOLOGY   (Sweden)

Author keywords

[No Author keywords available]

Indexed keywords

CHARGE CARRIERS; COMPUTER SIMULATION; FAILURE ANALYSIS; SEMICONDUCTING SILICON; SEMICONDUCTOR JUNCTIONS;

AVALANCHE INJECTION; OPTICAL EXCITATION; SAFE OPERATING AREA (SOA);

AVALANCHE DIODES;

EID: 0030691412     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (7)