Metamorphic GaAs/AlAs Bragg mirrors deposited on InP for 1,3/1,55 μm vertical cavity lasers

LEOS Summer Topical Meeting

Volumn , Issue , 1997, Pages 49-50

  Goldstein, L ^a   Fortin, C ^a   Salet, P ^a   Plais, A ^a   Jacquet, J ^a   Rocher, A ^a   Poussou, C ^a  

^a NOKIA RESEARCH CENTER   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CURRENT VOLTAGE CHARACTERISTICS; DEPOSITION; DISLOCATIONS (CRYSTALS); MIRRORS; MOLECULAR BEAM EPITAXY; PHOTOLUMINESCENCE; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING INDIUM PHOSPHIDE; SEMICONDUCTOR GROWTH;

BRAGG MIRRORS; METAMORPHIC GROWTH; VERTICAL CAVITY SURFACE EMITTING LASERS (VCSEL);

SEMICONDUCTOR LASERS;

EID: 0030691289     PISSN: 10994742     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (3)