Optical investigation of InAs growth on GaAs and lasing in singly and multiply stacked island quantum boxes

Materials Research Society Symposium - Proceedings

Volumn 448, Issue , 1997, Pages 487-492

  Kalburge, A ^a   Ramachandran, T R ^a   Heitz, R ^a   Xie, Q ^a   Chen, P ^a   Madhukar, A ^a  

^a UNIVERSITY OF SOUTHERN CALIFORNIA   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC FORCE MICROSCOPY; IN SITU PROCESSING; LASER BEAMS; PHOTOLUMINESCENCE; SCANNING TUNNELING MICROSCOPY; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTOR GROWTH; SEMICONDUCTOR LASERS; THERMAL EFFECTS;

MULTIPLE STACKED ISLAND QUANTUM BOXES; PHOTOLUMINESCENCE EXCITATION SPECTROSCOPY; QUASI 3D (Q3D) CLUSTERS; SEMICONDUCTING INDIUM ARSENIDE;

SEMICONDUCTING INDIUM COMPOUNDS;

EID: 0030689267     PISSN: 02729172     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (21)