Growth of ternary silicon carbon nitride as a new wide bandgap material

Materials Research Society Symposium - Proceedings

Volumn 468, Issue , 1997, Pages 31-37

  Chen, L C ^a   Chen, C K ^a   Bhusari, D M ^a   Chen, K H ^a   Wei, S L ^a   Chen, Y F ^a   Jong, Y C ^a   Lin, D Y ^a   Li, C F ^a   Huang, Y S ^a  

^a NATIONAL TAIWAN UNIVERSITY   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

CARBON INORGANIC COMPOUNDS; CRYSTALLINE MATERIALS; NITRIDES; SEMICONDUCTOR MATERIALS; SILICON COMPOUNDS; THIN FILMS;

NEW WIDE BAND GAP MATERIAL;

SEMICONDUCTOR GROWTH;

EID: 0030688772     PISSN: 02729172     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (19)