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Volumn 452, Issue , 1997, Pages 669-673
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Electroluminescent devices made from silicon nanocrystals embedded in various host matrices
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Author keywords
[No Author keywords available]
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Indexed keywords
CURRENT VOLTAGE CHARACTERISTICS;
ELECTRIC PROPERTIES;
ELECTRON ENERGY LEVELS;
FRACTURE TESTING;
LIGHT EMITTING DIODES;
NANOSTRUCTURED MATERIALS;
OPTICAL PROPERTIES;
SEMICONDUCTING SILICON;
SEMICONDUCTOR DEVICE MANUFACTURE;
ULTRASONIC APPLICATIONS;
CARRIER INJECTION;
RADIATIVE ELECTRON HOLE RECOMBINATION;
SILICON NANOCRYSTALS;
ULTRASONIC FRACTURING;
LUMINESCENT DEVICES;
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EID: 0030687798
PISSN: 02729172
EISSN: None
Source Type: Conference Proceeding
DOI: None Document Type: Conference Paper |
Times cited : (8)
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References (11)
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